NDD02N40T4G

Single FETs, MOSFETs Overview

The NDD02N40T4G is an N-channel power MOSFET from onsemi, rated for a drain-to-source voltage of 400 V and a continuous drain current of 1.7 A at 25°C case temperature. It features a maximum static drain-to-source on-resistance of 5.5 Ω at 10 V gate drive. The device is housed in a DPAK (CASE 369C) surface-mount package with a junction-to-case thermal resistance of 3.2 °C/W. Key electrical parameters include a gate threshold voltage of 0.8 to 1.6 V, total gate charge of 5.5 nC, and single-pulse avalanche energy capability of 120 mJ.

Single FETs, MOSFETs Feature Summary

• 100% avalanche tested for ruggedness
• Pb-free, halogen free, and BFR free construction
• RoHS compliant manufacturing

Single FETs, MOSFETs Applications

• DC-DC converters
• High-side and low-side switching applications
• Power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T4G corresponds to the DPAK tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets RoHS, Halogen-free, and BFR-free material requirements as specified in the datasheet documentation. Ensure compatibility with standard surface-mount assembly processes for the CASE 369C footprint.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 400 V blocking capability with moderate current handling up to 1.7 A. Consider the 5.5 Ω on-resistance for conduction loss calculations at 10 V gate drive. Evaluate the 3.2 °C/W junction-to-case thermal resistance against the expected power dissipation and heatsinking strategy to maintain safe operating temperatures within the -55 to +150 °C range.

Single FETs, MOSFETs Part Context

This part belongs to the NDD02N40/NDT02N40 family of N-channel power MOSFETs manufactured by onsemi. The family includes variations such as the IPAK leaded version (NDD02N40-1G) and the SOT-223 surface-mount version (NDT02N40T1G). All variants share identical electrical characteristics but differ in physical package style and shipping configuration.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same electrical specification and package include NDD02N40-1G (IPAK) and NDT02N40T1G (SOT-223), provided the mechanical form factor matches the design constraints. Cross-brand replacements must match the 400 V rating, 1.7 A current limit, and 5.5 Ω RDS(on) maximum.

Single FETs, MOSFETs FAQ

What is the maximum single-pulse drain-to-source avalanche energy?

The maximum single-pulse drain-to-source avalanche energy (EAS) is 120 mJ when tested at ID = 1 A.

What is the reverse recovery time of the body diode?

The reverse recovery time (trr) is 146 ns under test conditions of VGS = 0 V, VDD = 30 V, IS = 1.7 A, and di/dt = 100 A/µs.