ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
NDD03N50Z-1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 500V 2.6A IPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NDD03N50Z-1G
- Description：MOSFET N-CH 500V 2.6A IPAK
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.3Ohm @ 1.15A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：274 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：58W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for NDD03N50Z-1G
Single FETs, MOSFETs Overview
The NDD03N50Z-1G is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 500 V and a continuous drain current of 3 A. The device utilizes an IPAK (TO-251) through-hole package with three pins. Key electrical parameters include a maximum drain-source resistance of 2.7 Ω, a maximum gate threshold voltage of 4.5 V, and a typical gate charge of 12 nC at 10 V. It supports a maximum power dissipation of 75 W and operates within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Enhancement mode N-channel construction for standard switching applications
- Through-hole IPAK package design for robust mechanical mounting
- High breakdown voltage capability suitable for medium-voltage circuits
Single FETs, MOSFETs Applications
- General purpose power switching
- Inductive load control
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix '-1G' against official datasheets to confirm lead-free compliance and RoHS status. Ensure the ordering part number matches the exact pinout and thermal characteristics required for your PCB layout. Cross-reference with manufacturer documentation to validate availability and lifecycle status before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when a through-hole N-channel MOSFET with 500 V rating is required. Compare the 2.7 Ω Rds(on) against circuit loss requirements. Verify that the IPAK package dimensions fit the available board space and that the 75 W power dissipation rating aligns with the thermal management strategy employed in the design.
Single FETs, MOSFETs Part Context
This device belongs to the onsemi NDD series of N-channel power MOSFETs. These components are designed for general-purpose switching applications requiring reliable performance in medium-voltage environments. The series offers various voltage ratings and packages to accommodate different design constraints.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes such as NDD03N50ZT4G for surface-mount variants or other 500V N-channel MOSFETs with similar Rds(on) and package compatibility. Confirm pinout alignment and thermal performance equivalence before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
