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NDP7050L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 50V 75A TO220-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NDP7050L
- Description：MOSFET N-CH 50V 75A TO220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：15mOhm @ 37.5A, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：115 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-65°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for NDP7050L
Single FETs, MOSFETs Overview
The NDP7050L is an N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by onsemi. It features a Drain-Source Voltage (VDSS) of 50 V and a continuous Drain Current (ID) of 75 A at TC = 25°C. The static Drain-Source On-Resistance (RDS(ON)) is specified as 15 mΩ at VGS = 5 V and ID = 37.5 A, with a maximum gate threshold voltage (VGS(th)) of 2 V. Total power dissipation reaches 150 W at 25°C case temperature. The device operates within a junction temperature range of -65°C to 175°C.
Single FETs, MOSFETs Feature Summary
- Logic level operation enabled by low gate threshold voltage for direct drive from logic circuits.
- High density cell design minimizes on-state resistance for superior switching performance.
- Rugged internal source-drain diode withstands high energy pulses in avalanche and commutation modes.
Single FETs, MOSFETs Applications
- Automotive applications
- DC/DC converters
- PWM motor controls
- Battery powered circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'L' against the manufacturer's current datasheet to confirm package type and pinout configuration. Ensure the component meets RoHS compliance requirements if applicable to the target assembly. Confirm that the TO-220 package variant matches the intended thermal management strategy for the application.
Single FETs, MOSFETs Selection Notes
Select this component for low voltage applications requiring fast switching and low in-line power loss. The logic level gate drive capability simplifies driver circuit design. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the expected duty cycle and ambient conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Fairchild Semiconductor (now onsemi) family of N-Channel enhancement mode power field effect transistors. These devices utilize proprietary high cell density DMOS technology tailored to minimize on-state resistance and withstand high energy pulses. The series is designed for robust performance in demanding power switching environments.
Single FETs, MOSFETs Replacement Considerations
NDP7050NL
Single FETs, MOSFETs FAQ
What is the maximum nonrepetitive drain-source avalanche energy?
The single pulse drain-source avalanche energy (WDSS) is rated at 550 mJ when VDD is 25 V and ID is 75 A.
How does the on-resistance vary with temperature?
The on-resistance increases with junction temperature. At TJ = 125°C, the maximum RDS(ON) rises to 24 mΩ compared to 15 mΩ at 25°C under identical test conditions.
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