FET, MOSFET Arrays NDS9942 product image

NDS9942

$0.65
  • Description:MOSFET N/P-CH 20V 3A/2.5A 8SOIC
  • Series:-

SKU:e954a993c1fc Category: Brand:

  
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NDS9942 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 3A/2.5A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NDS9942

  • Description:MOSFET N/P-CH 20V 3A/2.5A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:3A, 2.5A
  • Rds On (Max) @ Id, Vgs:125mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:525pF @ 10V
  • Power - Max:900mW
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NDS9942

NDS9942

FET, MOSFET Arrays Overview

The NDS9942 is a dual P-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in an SOIC-8 surface-mount package. It features a drain-source voltage rating of 60 V and a continuous drain current of 2.3 A. The device exhibits a maximum on-resistance of 500 mΩ and a typical gate charge of 9 nC at the specified gate-source voltage. With a power dissipation capacity of 2 W, it operates within a temperature range of -55°C to 175°C. This component integrates two isolated transistors for efficient space-constrained circuit designs.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration providing two independent switching channels in a single compact package
  • PowerTrench technology optimized for low on-resistance and fast switching performance
  • Enhanced thermal stability supporting operation up to 175°C junction temperature

FET, MOSFET Arrays Applications

  • DC-DC converter load switches
  • Battery protection circuits
  • Low-side and high-side power management

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required for 60 V applications. Ensure the 2.3 A current rating and 500 mΩ resistance meet the system's thermal and efficiency requirements. Verify that the SOIC-8 footprint aligns with the PCB layout constraints.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family of MOSFETs, designed for general-purpose power switching. It serves as a complementary option to N-channel variants, offering integrated dual-channel functionality suitable for bridge drivers and multiplexed power paths.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives such as the NDS9948 if higher current ratings are acceptable. Verify electrical parameters like Rds(on) and Qg against existing design margins before substituting.

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