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Product Detailed Parameters
- Description：DIODE ARR SIC 1200V 15A TO247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：15A
- Voltage - Forward (Vf) (Max) @ If：1.75 V @ 15 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：200 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NDSH30120CDN is a Silicon Carbide (SiC) Schottky Diode from onsemi's EliteSiC series, housed in a TO-247-3LD package. It features a dual anode common cathode configuration with a peak repetitive reverse voltage of 1200 V and a continuous rectified forward current of 30 A per device. The component supports a maximum junction temperature of 175°C and offers high surge current capacity up to 91 A for half-sine pulses. Electrical characteristics include a typical forward voltage of 1.40 V at 15 A and 25°C, with low reverse leakage current.
Feature Summary
- Zero reverse recovery and zero forward recovery for superior switching performance
- Temperature-independent switching characteristics and positive temperature coefficient
- Avalanche rated capability for robust transient handling
- Halide-free and RoHS compliant construction
Applications
- General purpose power applications
- Switching Mode Power Supplies (SMPS)
- Solar inverters and Uninterruptible Power Supplies (UPS)
- Power switching circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to ensure correct packaging and compliance status. Confirm thermal management requirements align with the specified junction-to-case resistance values. Ensure application conditions remain within the absolute maximum ratings defined in the datasheet to maintain device reliability and functionality.
Selection Notes
Select this component for designs requiring high-frequency operation and reduced system size due to its fast switching capabilities. Consider the dual anode configuration for bridge or synchronous rectification topologies. Evaluate thermal dissipation needs based on the provided derating curves and ambient operating temperatures to optimize efficiency.
Part Context
This device belongs to onsemi's EliteSiC generation of silicon carbide diodes, designed to replace traditional silicon counterparts. It utilizes wide bandgap technology to achieve higher efficiency and power density. The TO-247-3LD package facilitates through-hole mounting with improved thermal performance compared to standard two-lead configurations.
Replacement Considerations
Direct replacements must match the 1200V rating, 30A current capacity, and TO-247-3LD package. Verify that substitute components also offer zero reverse recovery characteristics and compatible thermal resistance values to ensure circuit performance parity.
