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The NE46134-T1-QR-AZ is an NPN silicon RF bipolar transistor manufactured by CEL. It operates with a maximum collector current of 250mA and supports a maximum power dissipation of 2W. The device features a cutoff frequency up to 5.5GHz, making it suitable for high-frequency applications. It utilizes a surface-mount SOT-89 package and has a maximum operating junction temperature of 150°C. DC current gain is specified at a minimum of 40 under standard test conditions.
Verify the specific suffix 'QR' against the manufacturer's official datasheet to confirm pinout configuration and tape-and-reel specifications. Ensure the component matches the required SOT-89 footprint and thermal characteristics for the intended PCB layout. Cross-reference the part number with authorized CEL distributors to guarantee authenticity and traceability.
Select this component when designing circuits requiring NPN RF transistors with moderate power handling and high-frequency performance. Consider the 2W power dissipation limit and 150°C thermal rating during thermal management planning. Evaluate the SOT-89 package constraints for space-limited designs requiring surface-mount technology.
This part belongs to CEL's portfolio of RF bipolar transistors designed for medium-power applications. It serves as a functional equivalent to legacy components like the 2SC4536, providing modern surface-mount alternatives for RF engineering projects requiring reliable high-frequency amplification capabilities.
The NE46134-T1-QR-AZ is documented as being functionally equivalent to the 2SC4536. Verify pin compatibility and electrical parameters before substituting other NPN RF transistors in existing designs.