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The CEL NE46234-T1-SE-AZ is an NPN epitaxial silicon RF transistor designed for low distortion and low noise amplifier applications operating at a low supply voltage of VCE = 5 V. It utilizes a 3-pin Power Mini Mold (SOT-89) surface mount package. Key electrical parameters include a collector-to-base voltage (VCBO) of 25 V, a collector current (IC) rating of 150 mA, and a total power dissipation (Ptot) of 1.8 W on a specified ceramic substrate. The device features a gain bandwidth product (fT) of 6.0 GHz and a typical insertion power gain of 8.3 dB at 1 GHz. Intermodulation distortion specifications are IM2 = 55 dBc and IM3 = 76 dBc under standard test conditions.
Verify the specific suffix configuration to ensure correct binning and taping format. The SE designation indicates a DC current gain rank of 125 to 250. Confirm that the T1 suffix corresponds to the required reel quantity and tape orientation before finalizing procurement orders to match assembly line requirements.
Select this component when designing RF stages requiring minimal intermodulation distortion at 5 V supply voltages. Ensure the PCB layout accommodates the SOT-89 footprint and provides adequate copper area for heat dissipation to maintain the rated 1.8 W power handling capability within the junction temperature limits.
This part belongs to the NE46234 series, which is functionally equivalent to the 2SC4703. The manufacturer offers various ordering options distinguished by suffixes that define the packing method and hFE gain classification ranks. This specific variant targets applications needing precise gain control and low signal distortion in compact form factors.
The 2SC4703 serves as a direct functional equivalent within the same family. Verify pinout compatibility and thermal resistance characteristics against alternative NPN RF transistors if sourcing from different manufacturers.