NE5820M53-A

Overview

The NE5820M53 is a P-channel silicon MOSFET designed for microphone impedance conversion. It operates within a supply voltage range of 1.0 V to 10.0 V and consumes a typical current of 85 μA at 2.0 V. The device features low input capacitance (1.5 pF) and low output noise (-114 dBV). It provides a voltage gain of -3.0 dB with a total harmonic distortion of 0.1%. The component is housed in a compact 3-pin thin-type lead-less minimold package measuring 1.2 × 1.0 × 0.33 mm.

Feature Summary

• Low noise performance suitable for sensitive audio applications
• High-density surface mounting capability via compact package
• Built-in capacitor for RF noise immunity
• High electrostatic discharge voltage tolerance

Applications

• Microphone impedance converter circuits
• Sensor interface applications

Procurement Notes

Verify the specific ordering suffix when purchasing, as the standard part number may be supplied in embossed tape form on an 8 mm wide reel. Confirm that the procurement matches the exact package type and quantity requirements specified by the manufacturer's distribution guidelines.

Selection Notes

Select this component for designs requiring low power consumption and minimal signal degradation in microphone pre-amplification stages. Ensure the operating environment stays within the recommended ambient temperature range and verify that the PCB layout accommodates the specific dimensions of the lead-less minimold package.

Part Context

This device belongs to the Renesas Electronics discrete semiconductor portfolio, specifically engineered for analog signal processing tasks. It utilizes a P-channel silicon MOSFET technology optimized for high-density surface mounting, distinguishing it from through-hole or larger footprint alternatives in similar impedance conversion roles.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers before implementation.