SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NE663M04-T2-A is an NPN RF bipolar small-signal transistor manufactured by CEL, housed in a SOT-343F surface-mount package. It features a transition frequency of 15 GHz and supports a maximum power dissipation of 190 mW with a junction temperature rating of 150°C. Typical electrical characteristics include a noise figure of 1.2 dB and a gain of 12–14 dB at 2 GHz under VCE = 2 V and IC = 10 mA bias conditions. The device operates at a supply voltage of 3.3 V.
Verify the specific suffix T2-A against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with 3.3 V operating voltages and check thermal management requirements for 190 mW dissipation. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Select this component for designs requiring high-frequency performance at 15 GHz with minimal signal degradation. The low noise figure makes it suitable for front-end receiver chains. Consider the SOT-343F footprint for space-constrained PCB layouts and ensure biasing circuits support the specified 2 V or 3.3 V operating points.
This transistor belongs to CEL’s portfolio of RF bipolar devices, often associated with NEC/Renesas heritage components. It serves as a specialized solution for microwave frequency bands where size and noise performance are critical constraints in wireless communication systems.
The NE663M04 is listed as a related part number. Verify if the base model without the -T2-A suffix offers identical electrical parameters and packaging before substitution.
The typical noise figure is 1.2 dB at 2 GHz.
The transition frequency is 15 GHz.