NE68019-A

Overview

The CEL NE68019-A is a silicon NPN RF small signal bipolar transistor designed for L-band applications. It operates with a maximum collector current of 35 mA and a collector-emitter voltage rating of 10 V. The device features a transition frequency (fT) of 8 GHz at a test frequency of 2 GHz, providing a typical noise figure of 1.9 dB and a typical power gain of 11.5 dB under standard bias conditions. It is housed in a compact SOT-523 package.

Feature Summary

• Silicon NPN construction optimized for low-noise amplification
• Suitable for L-band wireless communication systems
• Compact surface-mount packaging for high-density designs

Applications

• Low Noise Amplifiers (LNAs)
• RF signal processing stages
• Wireless communication front ends

Procurement Notes

Verify the specific JEITA equivalent part number 2SC5008 to ensure compatibility with existing design specifications. Confirm that the SOT-523 package dimensions align with the target PCB layout constraints before finalizing component selection.

Selection Notes

Select this component when an 8 GHz transition frequency and low noise characteristics are required for L-band operations. Ensure the circuit design accommodates the 10 V collector-emitter voltage limit and the 35 mA maximum collector current capability for reliable performance.

Part Context

This component belongs to the CEL silicon bipolar transistor portfolio, specifically engineered for radio frequency applications. It serves as a discrete alternative to integrated MMIC solutions, offering designers flexibility in custom amplifier configurations within the L-band spectrum.

Replacement Considerations

The JEITA equivalent part number is 2SC5008. Verify pinout and electrical parameter alignment if substituting with other L-band NPN transistors from different manufacturers.