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The NE68019-T1-A is an NPN silicon high-frequency transistor from the CEL NE680 series, housed in a 3-pin Ultra Super Mini Mold plastic package. It features a gain bandwidth product (fT) of 10 GHz and supports operation up to 6 GHz. Key electrical characteristics include a collector-emitter voltage (VCEO) of 10 V, a maximum collector current (IC) of 35 mA, and a total power dissipation (PT) of 150 mW. The device exhibits low noise performance with a noise figure of 1.7 dB at 2 GHz and 2.6 dB at 4 GHz, alongside associated gains of 12.5 dB at 2 GHz and 8.0 dB at 4 GHz.
Verify component authenticity by cross-referencing the part number with official California Eastern Laboratories documentation. Confirm that the specific ordering suffix corresponds to the required package style and lead-free status. Ensure compliance with RoHS directives as indicated in the datasheet specifications before finalizing procurement orders.
Select this component for designs requiring high fT and low noise in compact surface-mount packages. Consider the 150 mW power dissipation limit and thermal resistance when designing heat management solutions. Verify biasing conditions against the provided typical performance curves to ensure stable operation within the specified voltage and current ranges.
This component belongs to the NE680 series of NPN epitaxial silicon transistors designed for low noise, high gain, and cost-effective applications. The series includes various package options such as chip, SOT-343, and SOT-23 styles. While the NE680 series is noted for its high fT, some part numbers within the family are not recommended for new designs; verification of current design recommendations is advised.
Consult the manufacturer's sales office for details on obsolete or non-recommended parts within the NE680 series. No direct public substitute part numbers are confirmed in the provided documentation. Evaluate alternative components based on matching fT, noise figure, and package dimensions if replacement is necessary.