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The NE68039R-T1-A is an NPN epitaxial silicon transistor from the CEL NE680 series, packaged in SOT-143R. It is designed for low noise and high gain applications up to 6 GHz. Key electrical characteristics at VCE = 6 V, IC = 5 mA include a noise figure of 1.7 dB at 2 GHz and 2.5 dB at 4 GHz. The associated gain is 12.5 dB at 2 GHz and 6.5 dB at 4 GHz. The maximum available gain reaches 12.4 dB at 2 GHz and 8.7 dB at 4 GHz under the same bias conditions. The device supports a collector current of up to 35 mA with a total power dissipation of 200 mW.
Verify the specific suffix T1-A against the manufacturer's official documentation to confirm tape and reel packaging specifications. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing standards. Ensure the supplier provides traceability data consistent with California Eastern Laboratories records.
Select this component when a small surface-mount package is required for high-frequency low-noise amplification. Compare the SOT-143R thermal resistance and pinout against alternative packages like SOT-143 or SOT-323 based on PCB layout constraints. Evaluate the trade-off between the 200 mW power dissipation limit and the required operating current for your specific circuit topology.
This part belongs to the NE680 series of NPN silicon transistors manufactured by California Eastern Laboratories. The series includes variants such as NE68039 and NE68035, sharing similar electrical profiles but differing in package styles. The NE68039R specifically denotes the SOT-143R package variant within this family.
Direct substitutes may include other parts from the NE680 series with compatible packages, such as the NE68039 in SOT-143. Verify pin compatibility and electrical parameters before substitution.