NE68039R-T1-A

NE68039R-T1-A

$0.53
  • Description:RF TRANS NPN 10V 10GHZ SOT-143R
  • Series:-

SKU:5f6c36182336 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 10V 10GHZ SOT-143R
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
  • Gain:6.5dB ~ 11dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 6V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-143R
  • Supplier Device Package:SOT-143R
  • Grade:-
  • Qualification:-

Download product information

NE68039R-T1-A

Overview

The NE68039R-T1-A is an NPN epitaxial silicon transistor from the CEL NE680 series, packaged in SOT-143R. It is designed for low noise and high gain applications up to 6 GHz. Key electrical characteristics at VCE = 6 V, IC = 5 mA include a noise figure of 1.7 dB at 2 GHz and 2.5 dB at 4 GHz. The associated gain is 12.5 dB at 2 GHz and 6.5 dB at 4 GHz. The maximum available gain reaches 12.4 dB at 2 GHz and 8.7 dB at 4 GHz under the same bias conditions. The device supports a collector current of up to 35 mA with a total power dissipation of 200 mW.

Feature Summary

  • Optimized for low noise figure performance in RF front-end stages
  • High gain bandwidth product suitable for frequencies up to 6 GHz
  • Capable of operation at low voltage and low current levels

Applications

  • Low noise amplifier (LNA) design
  • RF signal processing circuits
  • Wireless communication systems

Procurement Notes

Verify the specific suffix T1-A against the manufacturer's official documentation to confirm tape and reel packaging specifications. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing standards. Ensure the supplier provides traceability data consistent with California Eastern Laboratories records.

Selection Notes

Select this component when a small surface-mount package is required for high-frequency low-noise amplification. Compare the SOT-143R thermal resistance and pinout against alternative packages like SOT-143 or SOT-323 based on PCB layout constraints. Evaluate the trade-off between the 200 mW power dissipation limit and the required operating current for your specific circuit topology.

Part Context

This part belongs to the NE680 series of NPN silicon transistors manufactured by California Eastern Laboratories. The series includes variants such as NE68039 and NE68035, sharing similar electrical profiles but differing in package styles. The NE68039R specifically denotes the SOT-143R package variant within this family.

Replacement Considerations

Direct substitutes may include other parts from the NE680 series with compatible packages, such as the NE68039 in SOT-143. Verify pin compatibility and electrical parameters before substitution.

NE68039R-T1-ANE68039R-T1-A
$0.53
Buy Now