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The NE68139-T1 is an NPN epitaxial silicon transistor from the NEC/CEL NE681 series, packaged in a SOT-143 style surface mount housing. It is engineered for low noise and high gain amplifier applications up to 4 GHz. Key electrical characteristics include a gain bandwidth product (fT) of 9.0 GHz at VCE=8V, IC=20mA. At VCE=8V, IC=7mA, it achieves a noise figure of 1.2 dB at 1 GHz and 1.6 dB at 2 GHz, with associated gains of 13 dB and 12 dB respectively. The device supports a collector current of 65 mA and total power dissipation of 200 mW.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package outline matches SOT-143 style dimensions. Ensure storage conditions remain within -55°C to +150°C to prevent damage. Validate that the specific suffix corresponds to the intended tape and reel or bulk packaging configuration as defined by the supplier.
Select this component when designing RF front-ends requiring high linearity and low noise at frequencies up to 4 GHz. Consider the SOT-143 package for space-constrained surface mount designs. Evaluate biasing requirements against the specified VCEO of 10V and ICBO limits. Compare thermal resistance values if operating near maximum power dissipation limits.
This part belongs to the NE681 series of NPN silicon transistors designed for cost-effective high-frequency performance. The series includes chip, Micro-X, and various plastic surface mount packages like SOT-23, SOT-323, and SOT-143 styles. These devices share common core characteristics optimized for simultaneous low noise and high gain in amplifier stages.
Consult official documentation for direct substitutes within the NE681 family such as NE68139R. Verify pinout compatibility and electrical parameter equivalence before substitution. Cross-reference with other manufacturers' equivalent high-frequency NPN transistors only after confirming all critical RF and DC specifications match.