NE687M13-A

Overview

The CEL NE687M13-A is an NPN silicon transistor designed for low noise, high gain, and low cost requirements. It features a new miniature M13 package with dimensions of 1.0 x 0.5 x 0.5 mm and a height of 0.50 mm. The device offers a high gain bandwidth product (fT) of up to 14 GHz at VCE = 2 V and IC = 20 mA. It provides a low noise figure (NF) of 1.4 dB at 2 GHz under specific bias conditions. The collector current rating is 30 mA, with a total power dissipation of 90 mW. This component is well suited for very low voltage and low current designs in portable wireless communications.

Feature Summary

• Miniature M13 package with flat lead style for better RF performance
• High gain bandwidth product suitable for high-frequency applications
• Low noise figure optimized for sensitive receiver stages
• Designed for low voltage and low current portable wireless applications

Applications

• Portable wireless communications
• Cellular radio applications
• Low noise amplifier stages in RF circuits

Procurement Notes

Verify the -A suffix indicates Pb-free compliance per RoHS directives. Confirm the M13 package outline matches your PCB footprint requirements. Ensure thermal management supports the 90 mW total power dissipation limit within your operating temperature range. Check that the 30 mA collector current rating meets your circuit design specifications.

Selection Notes

Select this transistor for applications requiring high fT and low noise in a small form factor. Consider the 30 mA maximum collector current when designing bias networks. Evaluate the 90 mW power dissipation against your ambient temperature conditions. The M13 package is ideal for space-constrained portable devices requiring surface mount assembly.

Part Context

The NE687M13 is part of California Eastern Laboratories' portfolio of RF transistors. It is distributed by CEL as the exclusive North American agent for NEC RF, microwave, and optoelectronic semiconductors. The device corresponds to the EIAJ registered number 2SC5618. It utilizes a silicon NPN technology optimized for RF performance.

Replacement Considerations

The datasheet lists the EIAJ registered number 2SC5618 as equivalent. Verify pinout compatibility and electrical parameters before substitution. No other direct replacement part numbers are explicitly documented in the provided source material.

FAQ

What does the -A suffix indicate on the NE687M13-A?

The -A suffix indicates that the device is Pb-free and compliant with EU RoHS directives.

What is the maximum collector current for the NE687M13?

The maximum collector current (IC) is rated at 30 mA.

What is the typical noise figure at 2 GHz?

The typical noise figure is 1.4 dB at VCE = 2 V, IC = 3 mA, and f = 2 GHz.