NE85630-T1

Overview

The NE85630-T1 is an NPN silicon high-frequency bipolar RF transistor manufactured by CEL. It is designed for microwave low-noise amplification applications in the ultra-high frequency band. The device utilizes a surface-mount SOT-323 (SC-70) package with three terminals. Key electrical specifications include a maximum collector-emitter voltage of 12 V and a maximum collector current of 100 mA. The component operates at frequencies up to 4.5 GHz with a power dissipation rating of 150 mW.

Feature Summary

• NPN epitaxial silicon construction optimized for RF performance
• Designed for low-noise amplification in microwave circuits
• Surface-mount SOT-323 minimold package for compact integration

Applications

• Microwave low-noise amplifier stages
• Ultra-high frequency signal processing
• RF front-end modules

Procurement Notes

Verify availability status as this specific part number may be obsolete or discontinued by the manufacturer. Check for valid substitute part numbers such as BF776H6327XTSA1 if production continuity is required. Confirm package type and lead-free compliance through official datasheets before procurement.

Selection Notes

Select this component for designs requiring NPN RF transistors with 12V breakdown and 4.5GHz operation. Ensure circuit biasing aligns with the 100mA collector current limit. Consider thermal management for the 150mW dissipation rating in the SOT-323 package. Verify compatibility with ultra-high frequency band requirements.

Part Context

The NE85630-T1 belongs to the family of NPN silicon RF transistors from California Eastern Labs (CEL). It is engineered for high-frequency applications, specifically targeting low-noise amplification tasks. The device represents a discrete semiconductor solution for microwave circuits, distinct from integrated RF ICs.

Replacement Considerations

Public confirmed substitutes include BF776H6327XTSA1 from Infineon Technologies. Verify functional equivalence and pinout compatibility before substitution.