NE856M02-AZ

Overview

The CEL NE856M02-AZ is a silicon NPN RF transistor designed for high-frequency applications up to 1 GHz. It features a typical transition frequency (fT) of 6.5 GHz and a maximum collector-emitter voltage (VCEO) of 12 V. The device supports a maximum collector current of 100 mA and operates with a typical DC current gain (hFE) of 120 at 100 mA. Packaged in the M02 SOT-89 format, it provides an input noise figure of 1.1 dB and a maximum available gain of 13.5 dB at 1 GHz.

Feature Summary

• High-speed silicon NPN construction optimized for RF signal processing
• Low noise figure performance suitable for sensitive receiver front ends
• Robust power handling capabilities within standard bias conditions

Applications

• RF amplification stages in communication systems
• Low noise amplifier circuits operating below 1 GHz
• General purpose RF signal conditioning

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints by cross-referencing the M02 package dimensions provided in the datasheet before finalizing procurement orders.

Selection Notes

Select this component when a low-noise silicon solution is required for frequencies up to 1 GHz. Compare the 1.1 dB noise figure and 13.5 dB gain against alternative technologies like GaAs if higher linearity or lower noise is critical. Confirm that the 12 V breakdown voltage meets the circuit's dynamic range requirements.

Part Context

This part belongs to the NEC/CEL Silicon Bipolar Transistor family, specifically engineered for radio frequency applications. It serves as a discrete active element for amplification, distinct from integrated MMIC solutions. The M02 designation indicates the specific plastic surface-mount package style used for thermal and mechanical mounting.

Replacement Considerations

The NE856M02 is electrically equivalent to the 2SC5336. Verify pinout compatibility and thermal resistance characteristics when substituting with other NPN transistors in the same frequency range.