NESG2101M05-A

Overview

The NESG2101M05-A is an NPN Silicon Germanium (SiGe) RF transistor designed for medium output power amplification. It features a flat-lead 4-pin thin-type Super Minimold (M05) package. Key electrical parameters include a maximum collector-to-emitter voltage of 5.0 V, a continuous collector current of 100 mA, and a total power dissipation of 500 mW. The device exhibits a typical gain bandwidth product of 17 GHz at 2 GHz frequency. At 2 GHz with VCE = 3.6 V and ICq = 10 mA, it delivers a typical 1 dB compression point output power of 21 dBm.

Feature Summary

• Utilizes high breakdown voltage technology suitable for SiGe transistors.
• Optimized for medium output power, high-gain amplification applications.
• Supports low distortion, low noise, and high-gain amplification requirements.

Applications

• Medium output power amplification stages
• Low noise amplifier circuits
• High-gain amplification modules

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and lead-free status. Confirm that the M05 package dimensions align with the target PCB footprint. Check for RoHS compliance markers if required by the assembly process. Ensure electrostatic discharge precautions are observed during handling due to component sensitivity.

Selection Notes

Select this component when designing circuits requiring a balance between medium output power and low noise performance in the microwave range. Evaluate the thermal management capabilities, as the 500 mW power dissipation rating depends on mounting on a polyimide PCB. Consider the 5.0 V collector-to-emitter voltage limit when determining biasing conditions for the intended operating frequency.

Part Context

This part belongs to the NESG2101 series of NPN SiGe RF transistors manufactured by CEL, now a business partner of Renesas Electronics Corporation. The series includes variants such as the NESG2101M16 and NESG210719, which differ primarily in package type and pin configuration while sharing similar underlying semiconductor technologies.

Replacement Considerations

Direct replacements must match the M05 package and SiGe NPN characteristics. Potential alternatives within the same family include the NESG2101M16 or NESG210719, though these utilize different packages (M16 or 19/1608 PKG). Verify pinout compatibility and electrical specifications before substituting.

FAQ

What is the maximum stable power gain (MSG) of the NESG2101M05?

The typical Maximum Stable Power Gain (MSG) is 17.0 dB, measured at VCE = 3 V, IC = 50 mA, and f = 2 GHz.

What is the typical Noise Figure (NF) at 1 GHz?

At VCE = 2 V, IC = 7 mA, and f = 1 GHz, the typical Noise Figure is 0.6 dB.

How many pins does the NESG2101M05 package have?

The NESG2101M05 uses a flat-lead 4-pin thin-type Super Minimold (M05) package.