NESG2107M33-A

Overview

The NESG2107M33-A is an NPN silicon germanium RF transistor manufactured by CEL. It operates at frequencies up to 18 GHz with a gain bandwidth product of 20 GHz at 20 mA collector current. Key electrical parameters include a collector-emitter voltage of 5.0 V, collector current of 100 mA, and total power dissipation of 130 mW. The device features a noise figure of 0.9 dB and associated gain of 10 dB at 2 GHz. It utilizes a 3-pin Super Lead-Less Minimold (M33) package.

Feature Summary

• Designed for oscillator and high-gain amplification applications
• Utilizes high breakdown voltage technology for SiGe transistors
• Compliant with RoHS directive using lead-free terminals

Applications

• Oscillator circuits
• High-gain amplification stages
• Low-noise amplifier designs

Procurement Notes

Verify the specific ordering suffix when purchasing. The -A suffix indicates a lead-free version compliant with EU RoHS directives. Confirm availability as distribution status may vary. Ensure electrostatic discharge precautions are observed during handling due to component sensitivity.

Selection Notes

Select this component for S-band applications requiring low noise and high gain. Check hFE classification requirements; the FB rank offers a DC current gain range of 140 to 220. Verify thermal management needs against the 130 mW power dissipation limit on standard PCBs.

Part Context

This part is produced by California Eastern Laboratories (CEL), a business partner of NEC Compound Semiconductor Devices, Ltd. The datasheet identifies it as preliminary data from July 2004. It belongs to the NESG series of NPN silicon transistors designed for RF performance.

Replacement Considerations

NESG2107M33-T3-A is available in reel packaging. NESG210719-T1FB-A is a similar NEC NPN SiGe transistor but uses a different 1608 package.