NESG260234-T1-AZ

Overview

The NESG260234-T1-AZ is an NPN Silicon-Germanium (SiGe) RF transistor designed for medium output power amplification, delivering a typical output of 30 dBm at 460 MHz and 900 MHz. It utilizes the UHS2-HV process to achieve a collector-base breakdown voltage of 25 V and a maximum stable gain of 23 dB at 460 MHz. The device operates within a recommended range of up to 7.2 V collector-emitter voltage and 500 mA collector current. Packaged in a 3-pin Power Minimold (34 PKG), it supports input powers up to 20 dBm with high collector efficiency.

Feature Summary

• Engineered for medium output power amplification applications using SiGe HBT technology.
• Features high breakdown voltage capability via the UHS2-HV process for robust operation.
• Provides high maximum stable gain suitable for broadband RF amplification stages.

Applications

• Medium power RF amplification in two-way radio systems
• Low noise and distortion amplification in cable television return-path networks
• Broadband amplifiers for antenna and telecommunications infrastructure

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and supply form. The datasheet indicates that the standard part number may be supplied in magazine cases or on reels depending on the suffix. Confirm RoHS compliance status and terminal solder composition requirements directly with the supplier prior to procurement to ensure alignment with assembly specifications.

Selection Notes

Select this component when a silicon-germanium transistor is required for UHF-band applications demanding approximately 1 watt of output power. Ensure the design accommodates the 25 V collector-base breakdown voltage and the thermal resistance characteristics for the intended PCB layout. Verify that the operating frequency aligns with the specified linear gain and efficiency performance metrics provided in the electrical characteristics table.

Part Context

This device belongs to the NESG series of NPN SiGe RF transistors manufactured by NEC (now Renesas). The series includes variants such as the NESG2031M16 for low-noise applications and the NESG220034 for UHF-band low-distortion amplification. The NESG260234 specifically targets higher power levels compared to the lower-power members of the family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult the manufacturer's official cross-reference guides or contact sales offices for verified equivalent components.