NGB8202ANT4G

Overview

The NGB8202ANT4G is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Littelfuse Inc. It features a maximum collector-emitter voltage of 440V and a continuous collector current rating of 20A. The device has a power dissipation capacity of 150W and is housed in a surface-mount D2PAK package. It operates within a junction temperature range of -55°C to 175°C.

Feature Summary

• Single IGBT element configuration for discrete switching applications
• Surface-mount D2PAK packaging design for automated assembly integration
• High thermal performance supporting operation up to 175°C junction temperature

Applications

• Motor control systems
• Power supply circuits
• Inverter topologies

Procurement Notes

Verify component authenticity through authorized Littelfuse channels or certified distributors. Confirm lot traceability and RoHS compliance status prior to acquisition. Ensure storage conditions maintain moisture sensitivity levels appropriate for surface-mount devices. Validate part markings against official datasheet specifications to prevent counterfeit substitution.

Selection Notes

Select this component when a 440V rated single IGBT with 20A current capability is required in a D2PAK form factor. Consider the 150W power dissipation limit and 175°C thermal rating for thermal management design. Evaluate gate drive requirements compatible with standard IGBT switching characteristics.

Part Context

This component belongs to the Littelfuse single IGBT product family. It serves as a semiconductor switch for medium-power electronic applications. The D2PAK package provides a balance between power handling and PCB space efficiency compared to larger through-hole alternatives.

Replacement Considerations

Public sources indicate the NGB8202ANT4G is classified as obsolete. Verify availability of direct substitutes from Littelfuse or cross-reference with equivalent 440V/20A D2PAK IGBTs from other manufacturers ensuring matching electrical parameters and pinout compatibility.