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Product Detailed Parameters
- Description：IGBT 390V 20A D2PAK
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：390 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 4.5V, 20A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-/5µs
- Test Condition：300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The NGB8206ANT4G is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 350 V and a continuous collector current rating of 20 A at 25°C. The device is housed in a D²PAK (TO-263) surface-mount package with an insulated tab. Key electrical characteristics include a maximum saturated collector-emitter voltage of 1.9 V at a gate-emitter voltage of 4.5 V and a collector current of 20 A. The component supports a junction temperature range from -55°C to 175°C and includes an integrated anti-parallel diode.
Feature Summary
- Optimized for ignition coil drive circuits with low saturation voltage
- Integrated fast recovery anti-parallel diode for inductive load switching
- Insulated backside tab for direct heatsink mounting without additional insulators
Applications
- Ignition coil drivers in automotive engine control systems
- High-voltage DC-DC converter stages
- Inductive load switching modules
Procurement Notes
Verify the specific suffix 'T4G' confirms the tape-and-reel packaging format and lead-free compliance status required for automated assembly processes. Confirm RoHS directive adherence against current regulatory standards before finalizing procurement orders for production runs.
Selection Notes
Select this component when a 350 V blocking capability and 20 A continuous current handling are required in a compact surface-mount form factor. Ensure the thermal management design accommodates the power dissipation limits defined in the datasheet for the D²PAK package under expected operating conditions.
Part Context
This part belongs to the NGB820x series of ignition IGBTs from onsemi. It shares functional similarities with parts like the NGB8206NG but differs in packaging and manufacturing specifications. The series is specifically engineered for automotive ignition systems requiring robust performance under high thermal stress.
Replacement Considerations
Direct replacements include the NGB8206NG for through-hole or compatible surface-mount implementations. Verify pinout compatibility and thermal resistance values when substituting with other 350 V, 20 A IGBTs from different manufacturers.
