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Product Detailed Parameters
- Description：IGBT 390V 20A D2PAK
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：390 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 4.5V, 20A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-/5µs
- Test Condition：300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The NGB8206ANTF4G is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for surface-mount applications in the D2PAK-3 package. It features a collector-emitter breakdown voltage of 390 V and a continuous collector current rating of 20 A. The device supports a peak collector pulse current of 50 A and has a maximum power dissipation of 150 W. Key electrical parameters include a saturation voltage of 1.9 V at 4.5 V gate drive and 20 A collector current, with a turn-off time of 5 µs.
Feature Summary
- Integrates monolithic circuitry for ESD and overvoltage clamped protection
- Logic-level input type suitable for direct driver interface
- N-channel configuration with built-in diode functionality
Applications
- Inductive coil drivers
- Ignition systems
- Direct fuel injection controllers
Procurement Notes
Verify component authenticity through authorized onsemi channels or certified distributors. Confirm RoHS compliance status as historical data indicates non-compliance for specific variants. Check for active production status since some listings indicate discontinuation. Ensure the D2PAK-3 package matches design requirements. Validate datasheet revisions to confirm parameter consistency before integration into final designs.
Selection Notes
Select this IGBT for high-voltage switching applications requiring robust protection features. The integrated ESD and overvoltage clamping simplifies driver circuit design. Consider the 390 V rating for automotive ignition or industrial inductive loads. Evaluate thermal management needs given the 150 W power dissipation limit in the D2PAK package. Ensure gate drive voltages align with the logic-level specification for optimal performance.
Part Context
This component belongs to the NGB820 series of Ignition IGBTs from onsemi. These devices are specifically engineered for automotive and industrial environments where high reliability under harsh conditions is critical. The series combines high voltage handling with integrated protection, making it distinct from standard discrete IGBTs lacking such monolithic safety features.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing driver circuits if considering alternative components from other manufacturers.
