ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 390V 20A 150W D2PAK
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：390 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 4.5V, 20A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-/5µs
- Test Condition：300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
Download product information
Overview
The NGB8206NG is a logic-level, single N-channel IGBT in a D2PAK (CASE 418B-04) package. It features an integrated gate-emitter resistor and monolithic ESD protection circuitry. Key electrical parameters include a collector-emitter voltage of 390 V, continuous collector current of 20 A at 25°C case temperature, and a maximum pulsed current of 50 A. The device exhibits a low saturation voltage of 1.3 V typical at 10 A and 4.5 V gate drive. Thermal resistance from junction to case is 1.0 °C/W.
Feature Summary
- Integrates internal gate-emitter resistor for simplified driver interfacing
- Includes built-in ESD protection and overvoltage clamping circuitry
- Features low threshold voltage suitable for direct microprocessor connection
Applications
- Ignition systems
- Coil-on-plug applications
- Driver-on-coil configurations
- Direct fuel injection circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging format. The 'G' suffix indicates a lead-free package configuration. Confirm whether the required quantity matches rail or tape-and-reel specifications before finalizing procurement orders.
Selection Notes
Select this component for high-voltage switching applications requiring robust ESD tolerance. Ensure the driving circuit can supply sufficient gate voltage to achieve the specified low saturation voltage. Verify thermal management capabilities align with the junction-to-case thermal resistance limits under expected operating conditions.
Part Context
This part belongs to the NGB8206 series of ignition IGBTs manufactured by onsemi. It is designed specifically for automotive inductive load switching where high reliability and compact packaging are critical requirements for modern engine control modules.
Replacement Considerations
NGB8206NT4G
FAQ
What is the function of the internal gate-emitter resistor?
The integrated gate-emitter resistor provides a discharge path for the gate charge, eliminating the need for an external pull-down resistor and simplifying the driver circuit design.
How does the device handle electrostatic discharge events?
The NGB8206NG incorporates monolithic circuitry that integrates ESD protection, rated at 2.0 kV for the charged-device model and 8.0 kV for the human-body model.
