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Product Detailed Parameters
- Description：IGNITION IGBT 20 A, 350 V, N-CHA
- Series：*
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NGB8206NT4G is an N-channel IGBT manufactured by onsemi, designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 350 V and a continuous collector current rating of 20 A at 25°C. The device is housed in an insulated TO-263 (D²Pak) package, providing electrical isolation between the tab and the circuit. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.9 V at 20 A with a 15 V gate drive, and a typical turn-off time of 1.4 µs. The component supports a junction temperature range from -55°C to +175°C.
Feature Summary
- Insulated D²Pak package design ensures electrical isolation between the heat sink tab and the circuit ground.
- Optimized for low conduction losses through reduced collector-emitter saturation voltage characteristics.
- Engineered for robust performance in high-frequency switching environments with controlled turn-off timing.
Applications
- Ignition controllers and drivers
- Motor control systems
- Motion control circuits
Procurement Notes
Verify the specific suffix 'T4G' against official datasheets to confirm tape-and-reel packaging and RoHS compliance status. Ensure the insulated variant matches the application's thermal management requirements. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm that the TO-263 insulation specifications align with safety isolation standards required by the end equipment.
Selection Notes
Select this component when an insulated IGBT is required for high-side or isolated switching configurations. Compare the 350 V rating against system voltage peaks to ensure adequate margin. Evaluate the 20 A continuous current limit against load profiles and thermal dissipation capabilities. Consider the D²Pak footprint constraints during PCB layout planning.
Part Context
This device belongs to the NGB820x series of N-channel IGBTs from onsemi. The series is specifically targeted at automotive and industrial motor control applications requiring reliable high-voltage switching. The NGB8206NT4G represents a specific configuration within this family, distinguished by its 350 V rating and insulated packaging option.
Replacement Considerations
Direct substitutes may include other insulated IGBTs from the same series, such as NGB8202NT4G or NGB8204NT4G, provided voltage and current ratings are compatible. Verify pinout compatibility and thermal resistance values before substitution.
