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Product Detailed Parameters
- Description：IGBT 390V 20A 150W D2PAK3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：390 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 4.5V, 20A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-/5µs
- Test Condition：300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The NGB8206NTF4 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 350 V and a continuous collector current rating of 20 A at 25°C. The device incorporates a built-in fast recovery diode and a gate resistor to simplify driver circuit design. Packaged in an insulated D2PAK (TO-263) housing, it supports surface-mount assembly with thermal performance optimized for ignition systems. The maximum power dissipation is rated at 150 W under specified conditions, ensuring reliable operation in automotive environments.
Feature Summary
- Integrated gate resistor for simplified driver interface and noise immunity
- Built-in fast recovery anti-parallel diode for inductive load commutation
- Insulated D2PAK package providing electrical isolation from heatsink
Applications
- Automotive ignition coil drivers
- High-voltage DC-DC converter switches
- Inductive load switching circuits
Procurement Notes
Verify the exact suffix 'TF4' against official onsemi documentation, as standard listings often use 'T4G'. Confirm RoHS compliance status and lead-free specifications directly from the manufacturer's latest datasheet revision. Ensure the ordered part matches the insulated D2PAK package variant required for your thermal management design.
Selection Notes
Select this component when a 350 V blocking capability and 20 A continuous current are required in a compact surface-mount form factor. The integrated gate resistor reduces external component count, while the built-in diode eliminates the need for a separate freewheeling diode in inductive switching topologies. Verify thermal resistance requirements against the system's heatsinking capabilities.
Part Context
This IGBT belongs to the NGB8206 family of ignition-grade devices from onsemi. It shares functional similarities with parts like the NGB8206NG and NGB8207N but differs in specific voltage ratings and packaging suffixes. The NGB8206 series is specifically engineered for automotive ignition systems, offering robust performance under high-frequency switching conditions typical of modern engine control units.
Replacement Considerations
Direct substitutes include the NGB8206NG or NGB8206N for non-tape-and-reel versions. For equivalent performance with different packaging, consider the NGD8205N in DPAK format. Always verify pinout compatibility and thermal characteristics before substituting.
