NGD18N40CLBT4

Description：IGBT 430V 15A DPAK
Series：-

SKU:9559bb839518 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 430V 15A DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：430 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：50 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 4V, 15A
Power - Max：115 W
Switching Energy：-
Input Type：Logic
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：DPAK
Grade：-
Qualification：-

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NGD18N40CLBT4

Overview

The onsemi NGD18N40CLBT4G is a logic-level N-channel IGBT in a DPAK package, designed for high-voltage and high-current switching. It features monolithic ESD and overvoltage clamped protection. Key electrical parameters include a collector-emitter voltage of 430 VDC, continuous collector current of 15 A at 25°C case temperature, and pulsed current capability of 50 A. The device dissipates up to 115 W with a thermal resistance of 1.3 °C/W junction-to-case. On-state saturation voltage is typically 2.0 V at 10 A and 4.5 V gate drive. Operating temperature range spans from -55°C to +175°C.

Feature Summary

Monolithic integration of ESD and overvoltage clamped protection circuits
Temperature compensated gate-collector voltage clamp limits stress applied to load
Emitter ballasting provides enhanced short-circuit capability
Low threshold voltage interfaces power loads to logic or microprocessor devices

Applications

Ignition systems
Direct fuel injection
Coil-on-plug applications
Inductive coil drivers

Procurement Notes

Verify the specific ordering suffix 'T4G' against the official datasheet to confirm tape and reel packaging and lead-free status. Ensure compatibility with the required PCB footprint for the DPAK (CASE 369C) package. Confirm that the component meets all necessary environmental regulations for the intended deployment region before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring robust inductive load switching with integrated protection. The low saturation voltage aids efficiency, while the high UIS energy rating supports harsh automotive environments. Verify that the logic-level gate drive requirements align with the control microprocessor output voltages to ensure reliable turn-on characteristics under varying temperature conditions.

Part Context

This part belongs to the NGD18N40CLB series of ignition IGBTs manufactured by onsemi. It utilizes PowerMESH technology optimized for coil driving. The device is housed in a DPAK package, offering a smaller footprint compared to through-hole alternatives. It is specifically engineered to handle the high voltage spikes and current demands typical of automotive ignition and fuel injection systems.