NGD8205NT4

$0.86

Description：IGBT 390V 20A DPAK
Series：-

SKU:12e27a989c2f Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 390V 20A DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：390 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：50 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 4.5V, 20A
Power - Max：125 W
Switching Energy：-
Input Type：Logic
Gate Charge：-
Td (on/off) @ 25°C：-/5µs
Test Condition：300V, 9A, 1kOhm, 5V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：DPAK
Grade：-
Qualification：-

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NGD8205NT4

Overview

The NGD8205NT4G is a Logic Level Insulated Gate Bipolar Transistor (IGBT) from onsemi, packaged in a DPAK (CASE 369C) surface-mount format. It features an N-channel configuration with a collector-emitter voltage rating of 390 V and a continuous collector current capacity of 20 A at 25°C case temperature. The device integrates monolithic circuitry for gate-emitter ESD protection and a temperature-compensated gate-collector overvoltage clamp. Electrical characteristics include a low saturation voltage of 1.3 V typical at 10 A and 4.5 V gate drive, and a maximum power dissipation of 125 W. Thermal resistance from junction to case is specified at 1.2 °C/W.

Feature Summary

Integrates monolithic gate-emitter ESD protection and a temperature-compensated gate-collector overvoltage clamp to limit stress applied to the load.
Features a low threshold voltage designed for direct interfacing between power loads and logic or microprocessor devices.
Offers high pulsed current capability and low saturation voltage for efficient switching performance.
Available with optional internal gate resistor (RG) and gate-emitter resistor (RGE) configurations.

Applications

Ignition Systems
Coil-on-Plug Applications
Driver-on-Coil Applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. The 'T4G' suffix indicates tape and reel packaging with lead-free construction. Confirm that the required variant matches the exact electrical specifications and pinout defined in the manufacturer datasheet before procurement.

Selection Notes

Select this component for applications requiring compact board space due to the small DPAK footprint. Ensure the driving circuit can provide the necessary gate voltage levels to utilize the low threshold voltage feature. Verify thermal management requirements based on the junction-to-case thermal resistance and expected operating temperatures.

Part Context

This part belongs to the NGD8205N series of Ignition IGBTs manufactured by onsemi. It is specifically engineered for high-voltage and high-current switching environments where robust protection features are critical. The series includes variants with different internal resistor options to suit various driver interface requirements.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's documentation for potential cross-reference information or updated product recommendations.