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Product Detailed Parameters
- Description：IGBT 600V 20A DPAK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 10A
- Power - Max：72 W
- Switching Energy：412µJ (on), 140µJ (off)
- Input Type：Standard
- Gate Charge：53 nC
- Td (on/off) @ 25°C：48ns/120ns
- Test Condition：300V, 10A, 30Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
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Overview
The NGTB10N60R2DT4G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 10 A at 25 °C. The device utilizes a TO-220F-3 package for through-hole mounting. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical saturation voltage of 2.0 V at 5 A with a 15 V gate drive, and a maximum operating junction temperature of 175 °C.
Feature Summary
- Integrated fast recovery anti-parallel diode for inductive load switching
- Low saturation voltage to minimize conduction losses
- Robust thermal performance suitable for high-power applications
Applications
- Motor control drives
- Switching power supplies
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout configuration and packaging details. Ensure that the procurement channel provides traceable documentation for RoHS compliance and material declarations. Cross-reference the part number with the latest product change notices to avoid obsolete or modified versions.
Selection Notes
Select this component when a 600 V blocking capability and 10 A continuous current are required in a standard through-hole package. Consider the thermal resistance characteristics of the TO-220F-3 package for heat sink design. Evaluate the switching speed requirements against the integrated diode's reverse recovery time for high-frequency operation.
Part Context
This IGBT belongs to the NGTB series from onsemi, designed for general-purpose power switching. The series typically combines an IGBT chip with a fast recovery diode in a single module. This configuration simplifies circuit design for half-bridge and full-bridge topologies commonly found in industrial power electronics.
Replacement Considerations
Direct replacements must match the 600 V / 10 A rating and TO-220F-3 footprint. Verify compatibility of the saturation voltage and gate charge parameters to ensure equivalent thermal and switching performance in the existing circuit design.
