NGTB15N120FL2WG

$6.08

Description：IGBT TRENCH FS 1200V 30A TO-247
Series：-

SKU:f9685b242033 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 30A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 15A
Power - Max：294 W
Switching Energy：1.2mJ (on), 370µJ (off)
Input Type：Standard
Gate Charge：109 nC
Td (on/off) @ 25°C：64ns/132ns
Test Condition：600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)：110 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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NGTB15N120FL2WG

Overview

The NGTB15N120FL2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing Field Stop II Trench technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 30 A. The device operates within a junction temperature range of -55°C to 175°C and is housed in a TO-247 package for through-hole mounting. Key electrical parameters include a maximum power dissipation of 268 W, a gate-emitter voltage limit of ±20 V, and a switching speed capability of 1 MHz.

Feature Summary

Field Stop II Trench construction provides low on-state voltage and minimal switching loss
Integrated soft and fast co-packaged free-wheeling diode with low forward voltage
Optimized for high-speed switching applications
Capable of withstanding short circuit conditions

Applications

Solar Inverter systems
Uninterruptible Power Supply (UPS)
Welding equipment

Procurement Notes

Verify the specific suffix against official datasheets to confirm RoHS compliance and lead-free status. Confirm the manufacturer's active lifecycle status before procurement. Ensure thermal management solutions align with the specified maximum junction temperature and power dissipation ratings for reliable operation.

Selection Notes

Select this component for designs requiring robust performance in high-voltage environments up to 1200 V. The integrated anti-parallel diode simplifies circuit topology for inductive loads. Verify that the required continuous current does not exceed the rated limits under the expected operating ambient temperature conditions.

Part Context

This IGBT belongs to the Field Stop II series, designed for cost-effective yet high-performance switching. It shares architectural similarities with other models in the NGTB family, such as the NGTB40N120FL2WG, but offers lower current ratings suitable for medium-power applications.

Replacement Considerations

Compatible substitutes within the same series include the NGTB20N120FL2WG and NGTB25N120FL2WG. These alternatives offer higher current capacities while maintaining similar voltage ratings and package configurations.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.