SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi NGTB20N120IHTG is a Field-Stop IGBT in the TO-247 package. It features an N-channel configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 20 A at 25°C. The device supports a switching speed of 1 MHz and operates within a junction temperature range of -55°C to 175°C. Key electrical parameters include a maximum power dissipation of 349 W, a collector-emitter saturation voltage of 1.7 V, and a gate-emitter voltage rating of ±30 V.
Verify the specific suffix 'IHTG' against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing PCB footprints and heatsinking requirements. Confirm RoHS compliance status through manufacturer documentation before integration into regulated products.
Select this component for applications requiring high voltage blocking and moderate current handling. Compare saturation voltage and switching losses against alternative models like NGTB25N120FL3WG based on thermal management constraints. Evaluate gate drive requirements to ensure proper operation within the specified voltage limits.
This part belongs to onsemi's Field-Stop IGBT family, designed for efficient power switching. It shares architectural similarities with other TO-247 mounted devices but offers distinct current and voltage ratings tailored for industrial power electronics.
Direct substitutes may include NGTB20N120FTT4G or NGTB25N120FTT4G if higher current tolerance is acceptable. Verify pin compatibility and thermal resistance values before substitution.