NGTB20N135IHRWG

Overview

The NGTB20N135IHRWG is an N-channel Insulated Gate Bipolar Transistor (IGBT) with a monolithic free-wheeling diode, manufactured by onsemi. It utilizes Field Stop Trench technology to achieve low on-state voltage and minimal switching loss. The device features a collector-emitter breakdown voltage of 1350 V and a continuous collector current of 40 A at 25°C case temperature. Key electrical parameters include a saturation voltage of 2.20 V at 20 A, a turn-off switching loss of 0.60 mJ at 25°C, and a gate charge of 234 nC. It operates within a junction temperature range of -40°C to +175°C and is housed in a TO-247 package.

Feature Summary

• Robust Field Stop Trench construction for superior performance in demanding switching applications
• Integrated monolithic free-wheeling diode providing a reliable single-die solution
• Optimized for low losses in high-frequency resonant or soft-switching environments

Applications

• Inductive heating systems
• Consumer appliances such as IH cookers
• Soft switching power conversion circuits

Procurement Notes

Verify the component authenticity by checking the marking diagram for the '20N135IHR' identifier and the 'G' suffix indicating a lead-free package. Confirm the ordering information matches the specific datasheet revision NGTB20N135IHR/D. Ensure that the procurement source provides traceability documentation consistent with onsemi's quality standards for industrial-grade semiconductor components.

Selection Notes

Select this IGBT for applications requiring high voltage blocking capability up to 1350 V and efficient thermal management due to its low thermal resistance. Consider the 40 A continuous current rating and the specific switching loss characteristics when designing for resonant or soft-switching topologies. Evaluate the gate charge requirements against the driver capabilities to ensure optimal switching performance and minimize total system losses.

Part Context

This component belongs to onsemi's Field Stop IGBT series, designed specifically for high-performance power conversion. It represents a cost-effective single-die solution that integrates both the IGBT and the free-wheeling diode. The series targets applications where efficiency and reliability are critical, such as induction cooking and other consumer appliance power stages.

Replacement Considerations

Direct substitutes within the same family include the NGTB20N120IHRWG and NGTB15N135IHRWG. Verify pinout compatibility and thermal resistance values before substitution. Ensure that the alternative part meets the required 1350 V breakdown voltage and current handling specifications for the specific application design.