NGTB25N120FL3WG

Overview

The onsemi NGTB25N120FL3WG is a Field Stop N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a maximum continuous collector current of 25 A and a breakdown voltage of 1200 V. The device operates within a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 349 W. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V and a gate-emitter voltage rating of ±30 V. Packaged in a TO-247 through-hole housing, this component supports switching frequencies up to 1 MHz.

Feature Summary

• Field Stop technology provides optimized trade-off between conduction losses and switching performance.
• High thermal stability allows reliable operation at elevated junction temperatures up to 175°C.
• Robust TO-247 package facilitates efficient heat dissipation for high-power modules.

Applications

• Industrial motor drives and inverters
• Switched-mode power supplies (SMPS)
• High-frequency welding equipment

Procurement Notes

Verify the specific suffix 'FL3' against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides traceable documentation confirming RoHS compliance and authenticity. Cross-reference the part number with the latest onsemi release notes to validate active status and any potential design-for-manufacturing updates.

Selection Notes

Select this component when a 1200 V blocking capability is required alongside moderate current handling around 25 A. The Field Stop architecture suits applications demanding lower switching losses compared to standard trench IGBTs. Verify that the system's thermal management can handle the 349 W dissipation rating under worst-case operating conditions.

Part Context

This device belongs to onsemi's Field Stop IGBT family, which utilizes advanced epitaxial layer engineering to reduce tail current during turn-off. The TO-247 form factor is standard for discrete power modules requiring direct mounting to heatsinks. It serves as a core switching element in medium-voltage power conversion circuits.

Replacement Considerations

Direct substitutes may include other 1200 V, 25 A Field Stop IGBTs in TO-247 packages from onsemi or competitors, provided pinouts and Vce(sat) characteristics match. Verify thermal resistance values and gate charge specifications before substitution.