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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 60A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 30A
- Power - Max：560 W
- Switching Energy：4.4mJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：420 nC
- Td (on/off) @ 25°C：136ns/360ns
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTB30N120LWG is a Field Stop (FS) Trench Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a co-packaged free-wheeling diode and is housed in a TO-247 package. The device supports a collector-emitter voltage of 1200 V, with continuous collector currents of 60 A at 25°C and 30 A at 100°C. It offers a maximum saturation voltage of 2.2 V at 150°C and a short-circuit withstand time of 5 μs. Thermal resistance from junction to case is 0.223 °C/W for the IGBT and 1.5 °C/W for the diode.
Feature Summary
- Field Stop Trench construction provides low on-state voltage and minimal switching loss.
- Integrated rugged co-packaged free-wheeling diode with low forward voltage.
- Capable of 5 μs short-circuit withstand time under specified conditions.
Applications
- Inverter welding machines
- Microwave ovens
- Industrial switching systems
- Motor control inverters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free status and assembly details. Confirm that the component meets RoHS compliance requirements before integration into final assemblies. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.
Selection Notes
Select this component for resonant or soft-switching applications requiring robust performance. Evaluate the 1200 V rating and 60 A current capacity against peak load requirements. Consider the 5 μs short-circuit capability for system protection strategies. Verify gate drive compatibility with the specified threshold and charge parameters.
Part Context
This part belongs to the NGTB series of high-performance IGBTs designed for demanding power conversion tasks. It utilizes advanced trench technology to optimize efficiency. The product line targets industrial and consumer appliances where reliability and low power dissipation are critical design constraints.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capabilities, and package dimensions to preserve mechanical and electrical compatibility within the existing circuit design.
FAQ
What is the short-circuit withstand time for this device?
The device has a short-circuit withstand time of 5 μs when VGE = 15 V, VCE = 600 V, and TJ ≤ 150°C.
Does this IGBT include an integrated diode?
Yes, it incorporates a rugged co-packaged free-wheeling diode with low forward voltage characteristics.
What is the maximum operating junction temperature?
The operating junction temperature range extends up to +150 °C.
