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Product Detailed Parameters
- Description：IGBT TRENCH 1400V 60A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1400 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 30A
- Power - Max：357 W
- Switching Energy：1.05mJ (off)
- Input Type：Standard
- Gate Charge：163 nC
- Td (on/off) @ 25°C：-
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB30N140IHR3WG is a single N-channel trench IGBT designed for high-power switching applications. It features a maximum collector-emitter voltage (Vceo) of 1400 V and a continuous collector current (Ic) of 60 A at 25°C. The device supports a pulsed collector current (Icm) of 120 A and has a maximum power dissipation of 357 W. Key electrical parameters include a gate charge of 163 nC, an off-state switching energy of 1.05 mJ, and a maximum saturation voltage (Vce(on)) of 1.95 V at 15 V gate drive and 30 A collector current. It operates within a junction temperature range of -40°C to 175°C and is housed in a TO-247-3 through-hole package.
Feature Summary
- Trench field-stop technology for optimized switching performance and low conduction losses.
Applications
- High-frequency motor drives
- Switched-mode power supplies
- Industrial inverters
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm the specific suffix matches the required specifications. Check for obsolescence status as availability may be limited. Ensure storage conditions comply with moisture sensitivity levels. Validate that the package type aligns with the target PCB footprint.
Selection Notes
Select this component when a 1400 V rating is required for high-voltage isolation. Consider the 60 A continuous current capability for moderate power loads. Evaluate thermal management requirements based on the 357 W power dissipation limit. Compare gate charge characteristics against driver capabilities for optimal switching speed.
Part Context
This part belongs to onsemi's high-voltage IGBT portfolio, utilizing trench technology for improved efficiency. It serves as a discrete switching element in power electronics circuits. The TO-247-3 package provides robust mechanical stability and thermal conductivity for through-hole mounting.
Replacement Considerations
Direct substitutes must match the 1400 V / 60 A / TO-247-3 specification. Verify pinout compatibility and thermal resistance values. Cross-reference datasheets for equivalent switching energies and saturation voltages to ensure circuit performance parity.
