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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 80A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
- Power - Max：535 W
- Switching Energy：3.4mJ (on), 1.1mJ (off)
- Input Type：Standard
- Gate Charge：313 nC
- Td (on/off) @ 25°C：116ns/286ns
- Test Condition：600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：240 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The NGTB40N120FL2WG is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, utilizing Field Stop II Trench technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 25°C, increasing to 80 A under pulsed conditions. The device operates with a maximum junction temperature of 175°C and supports a short-circuit capability of 10 microseconds. It is housed in a lead-free TO-247 package with tin terminals, designed for high-efficiency switching applications.
Feature Summary
- Field Stop II Trench construction provides low on-state voltage and minimal switching loss.
- Integrated soft and fast co-packaged free-wheeling diode with low forward voltage.
- Optimized for high-speed switching operations in demanding environments.
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welding Equipment
Procurement Notes
Verify the component authenticity against official onsemi documentation. Confirm that the specific part number matches the required electrical specifications and package type. Ensure compliance with RoHS standards and lead-free requirements as specified in the manufacturer's datasheet before integration into production systems.
Selection Notes
Select this IGBT for designs requiring robust performance in high-voltage switching scenarios. The integrated anti-parallel diode simplifies circuit topology for inductive loads. Consider thermal management solutions suitable for TO-247 packages to maintain junction temperatures within the 175°C limit during continuous operation.
Part Context
This component belongs to onsemi’s Field Stop II series of IGBTs. It is engineered to replace older generation devices in power conversion circuits. The technology focuses on reducing conduction and switching losses simultaneously, offering improved efficiency compared to standard trench IGBTs without integrated diodes.
Replacement Considerations
Direct replacements include other onsemi Field Stop II devices such as NGTB25N120FL2WG or NGTB50N120FL2WG, provided current ratings align with the application needs. Cross-brand substitutes require careful verification of pinout compatibility and electrical parameters.
