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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 160A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：160 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：454 W
- Switching Energy：1.5mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：220 nC
- Td (on/off) @ 25°C：18ns/150ns
- Test Condition：600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：86 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTB40N120L3WG is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Ultra Field Stop trench technology to achieve high performance in switching applications. The device features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 25°C. It operates with a maximum power dissipation of 341 W and supports junction temperatures up to 175°C. The component is housed in a TO-247 package for through-hole mounting, offering robust thermal management capabilities suitable for industrial power conversion systems.
Feature Summary
- Ultra Field Stop trench technology design for optimized switching performance
- High temperature stability supporting operation up to 175°C junction temperature
- Robust packaging configuration for reliable thermal dissipation in high-power circuits
Applications
- Industrial motor drives and inverters
- Uninterruptible power supply (UPS) systems
- Solar inverters and renewable energy converters
Procurement Notes
Verify the specific datasheet revision when sourcing, as electrical characteristics may vary between manufacturing batches or updates. Confirm that the TO-247 pinout matches the target PCB footprint. Ensure the supplier provides traceability documentation consistent with onsemi quality standards. Check for lead-free compliance markings if required by environmental regulations.
Selection Notes
Select this component for applications requiring 1200V blocking capability with moderate current handling around 40A. Compare switching losses against other Ultra Field Stop variants like the NGTB40N120FL3WG if lower loss is critical. Ensure the gate drive circuit can handle the input capacitance specified in the datasheet. Verify thermal resistance values align with the heatsink design constraints.
Part Context
This part belongs to onsemi's IGBT portfolio utilizing Ultra Field Stop technology. It is related to models such as NGTB25N120L3WG and NGTB40N120FL3WG within the same series. These devices are designed to meet the stringent requirements of modern high-efficiency power electronics. The family focuses on balancing conduction and switching losses for industrial use cases.
Replacement Considerations
Direct substitutes include NGTB40N120FL3WG and FGH40T120SQDNL4. Verify pin compatibility and thermal characteristics before substitution. Cross-reference switching times and saturation voltages to ensure system performance remains within specifications.
