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The NGTB40N135IHRWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for high-power switching applications. It features an integrated monolithic free-wheeling diode to simplify circuit design and reduce component count. The device is housed in a TO-247 package suitable for through-hole mounting, offering robust thermal performance. Key electrical specifications include a maximum collector-emitter voltage of 1350 V and a continuous collector current of 40 A at 25°C. The IGBT supports a maximum power dissipation of 535 W and operates within a junction temperature range of -40°C to +175°C.
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct pinout and thermal characteristics. Confirm RoHS compliance status as per the final character of the part number. Cross-reference the date code with production timelines to avoid obsolete stock. Ensure the supplier provides original manufacturer packaging to prevent counterfeit components. Validate that the procurement channel is an authorized distributor for warranty coverage.
Select this component when a 1350 V blocking voltage and 40 A continuous current rating are required. Consider the integrated diode if reverse recovery losses need minimization without adding discrete components. Evaluate the TO-247 package constraints for PCB layout and heatsinking requirements. Compare switching energy losses against alternative technologies like SiC or GaN for efficiency-critical designs. Ensure gate drive voltage compatibility with the specified threshold levels.