NGTB40N60L2WG

Overview

The onsemi NGTB40N60L2WG is a Field Stop Trench Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel diode, housed in a TO-247 package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C case temperature. The device exhibits a low saturation voltage of 1.65 V at 40 A and 15 V gate drive. Key electrical parameters include a total switching loss of 1.45 mJ and a turn-off switching loss of 0.28 mJ under standard test conditions. It supports a short-circuit withstand time of 5 µs and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Utilizes robust Field Stop Trench technology for optimized low on-state voltage and minimal switching loss.
• Features a soft fast reverse recovery diode designed for demanding switching applications.
• Provides 5 µs short-circuit capability for enhanced system reliability.

Applications

• Motor Drive Inverters
• Industrial Switching
• Welding

Procurement Notes

Verify the specific ordering suffix 'G' indicates a lead-free package configuration as documented by the manufacturer. Confirm that the component is supplied in rails containing 30 units per rail. Ensure compatibility with through-hole mounting requirements associated with the TO-247 mechanical outline before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring high efficiency in medium-power switching environments. The low saturation voltage and optimized switching characteristics make it suitable for applications where thermal management and energy efficiency are critical constraints. Validate the 600 V rating against peak transient voltages in the target circuit design.

Part Context

This IGBT belongs to onsemi's portfolio of power semiconductor devices engineered for industrial and automotive-grade performance. The Field Stop Trench construction represents a specific technological iteration aimed at reducing conduction and switching losses compared to earlier planar designs. It serves as a core switching element in power conversion topologies.

Replacement Considerations

Direct pin-to-pin replacements must match the 600 V / 80 A rating and TO-247 footprint. Verify that alternative Field Stop Trench IGBTs maintain comparable short-circuit withstand times and reverse recovery diode characteristics to ensure circuit stability without redesign.

FAQ

What is the maximum short-circuit withstand time for this device?

The device supports a short-circuit withstand time of 5 µs when VGE is 15 V, VCE is 400 V, and the junction temperature is less than or equal to +150°C.

How does the junction temperature affect the collector-emitter saturation voltage?

The saturation voltage increases with temperature; it is specified at 1.65 V at 25°C and rises to 1.90 V at a junction temperature of 175°C under identical test conditions.

What are the typical dynamic characteristics at 25°C?

At 25°C with IC = 40 A and VCC = 400 V, the turn-off switching loss (Eoff) is typically 0.28 mJ, and the total switching loss (Ets) is typically 1.45 mJ.