SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NGTB40N65IHL2WG is a Field Stop IGBT from onsemi, rated for 650V collector-emitter voltage and 80A continuous collector current. It utilizes TO-247 packaging with a maximum power dissipation of 405W. The device features a typical saturation voltage of 1.7V at 40A and a gate charge of 190nC. Operating temperatures range from -40°C to +175°C junction temperature.
Verify the exact suffix against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status through manufacturer documentation before integration into regulated equipment designs.
Select this component for high-voltage applications requiring low conduction losses. Evaluate thermal management requirements based on the 405W dissipation rating. Ensure gate drive circuits accommodate the specified 190nC gate charge for optimal switching speeds.
This part belongs to onsemi's high-power IGBT portfolio designed for industrial and energy conversion markets. It complements other 650V devices by offering enhanced efficiency through Field Stop architecture within standard TO-247 form factors.
Consult official substitution guides for direct replacements. Verify electrical parameters and pin compatibility with alternative suppliers before implementation.