NGTB40N65IHL2WG

NGTB40N65IHL2WG

$2.23
  • Description:IGBT TRENCH FS 650V 80A TO-247-3
  • Series:-

SKU:dbb5edfbe20d Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 80A TO-247-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):160 A
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 40A
  • Power - Max:300 W
  • Switching Energy:360µJ (off)
  • Input Type:Standard
  • Gate Charge:135 nC
  • Td (on/off) @ 25°C:-/140ns
  • Test Condition:400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr):465 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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NGTB40N65IHL2WG

Overview

The NGTB40N65IHL2WG is a Field Stop IGBT from onsemi, rated for 650V collector-emitter voltage and 80A continuous collector current. It utilizes TO-247 packaging with a maximum power dissipation of 405W. The device features a typical saturation voltage of 1.7V at 40A and a gate charge of 190nC. Operating temperatures range from -40°C to +175°C junction temperature.

Feature Summary

  • Field Stop technology for optimized switching performance
  • High thermal efficiency in TO-247 package
  • Robust avalanche capability

Applications

  • Industrial motor drives
  • Switched-mode power supplies
  • Uninterruptible power systems

Procurement Notes

Verify the exact suffix against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status through manufacturer documentation before integration into regulated equipment designs.

Selection Notes

Select this component for high-voltage applications requiring low conduction losses. Evaluate thermal management requirements based on the 405W dissipation rating. Ensure gate drive circuits accommodate the specified 190nC gate charge for optimal switching speeds.

Part Context

This part belongs to onsemi's high-power IGBT portfolio designed for industrial and energy conversion markets. It complements other 650V devices by offering enhanced efficiency through Field Stop architecture within standard TO-247 form factors.

Replacement Considerations

Consult official substitution guides for direct replacements. Verify electrical parameters and pin compatibility with alternative suppliers before implementation.

NGTB40N65IHL2WGNGTB40N65IHL2WG
$2.23
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