NGTB40N65IHRWG

Description：IGBT FIELD STOP 650V 80A TO247
Series：-

SKU:4295d7e378d5 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT FIELD STOP 650V 80A TO247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 40A
Power - Max：405 W
Switching Energy：420µJ (off)
Input Type：Standard
Gate Charge：190 nC
Td (on/off) @ 25°C：-
Test Condition：400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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NGTB40N65IHRWG

Overview

The onsemi NGTB40N65IHRWG is an N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a monolithic reverse conducting diode and Field Stop (FS2) trench technology. It operates with a collector-emitter voltage of 650 V and supports a continuous collector current of 80 A at 25°C, derating to 40 A at 100°C. The device has a maximum power dissipation of 405 W at 25°C and a junction temperature range of -40°C to +175°C. Key electrical parameters include a collector-emitter saturation voltage of 1.55 V at 40 A and a turn-off switching loss of 0.42 mJ under standard test conditions.

Feature Summary

Integrates a monolithic reverse conducting diode for cost-effective single-die solutions
Utilizes extremely efficient trench field stop technology for low conduction losses
Optimized design specifically suited for resonant or soft switching applications

Applications

Inductive heating systems
Air conditioning power factor correction circuits
Welding equipment

Procurement Notes

Verify the component authenticity by checking the marking diagram for the 'AYWWG' sequence against the datasheet specifications. Confirm that the package matches the TO-247 form factor and ensure the ordering suffix indicates a lead-free construction. Cross-reference the part number with official manufacturer documentation to validate technical compliance before integration.

Selection Notes

Select this component when designing circuits requiring integrated reverse conduction to minimize external diode usage. The low saturation voltage makes it suitable for high-efficiency power conversion. Ensure thermal management strategies account for the specified junction-to-case thermal resistance to maintain operation within the safe operating area limits during peak load conditions.

Part Context

This device belongs to the NGTB series of IGBTs from onsemi, which are designed for robust performance in medium-power applications. The specific model integrates advanced trench gate technology to enhance switching efficiency while maintaining reliable operation across a wide temperature range, distinguishing it from standard discrete IGBT configurations.