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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 90A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Bulk,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：90 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 45A
- Power - Max：250 W
- Switching Energy：550µJ (off)
- Input Type：Standard
- Gate Charge：134 nC
- Td (on/off) @ 25°C：70ns/144ns
- Test Condition：400V, 45A, 10Ohm, 15V
- Reverse Recovery Time (trr)：376 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTB45N60SWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ON Semiconductor. It features a maximum collector-emitter voltage of 600 V and a maximum continuous collector current of 100 A at 25 °C. The device operates with a maximum gate-emitter voltage of ±20 V and has a typical power dissipation rating of 595 W. It utilizes a TO-247 through-hole package with three pins. The component supports a switching speed up to 1 MHz and includes a built-in fast-recovery body diode. Operating temperatures range from -55 °C to +175 °C, with a maximum junction temperature capability.
Feature Summary
- High-voltage N-channel IGBT configuration designed for robust power switching applications
- Integrated fast-recovery body diode for efficient commutation in inductive loads
- Thermal efficiency optimized for high-power density designs via TO-247 packaging
Applications
- Inverter welding equipment
- Switched-mode power supplies (SMPS)
- Motor control drives
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct electrical characteristics and packaging options. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure the supplier provides valid traceability documentation for quality assurance purposes.
Selection Notes
Select this component for applications requiring 600 V blocking capability and high current handling up to 100 A. Consider the thermal resistance and package type when designing heat sinks. Verify that the drive circuit can support the required gate voltage levels and switching frequencies specified in the datasheet for optimal performance.
Part Context
This part belongs to ON Semiconductor's discrete IGBT portfolio, specifically targeting industrial and consumer power electronics markets. It is part of a family of high-voltage transistors designed for efficiency and reliability in power conversion systems. The TO-247 form factor is standard for through-hole mounting in medium-to-high power modules.
Replacement Considerations
Check for direct pin-compatible substitutes such as the NGTB45N60S1WG or NGTB45N60S2WG from ON Semiconductor. Verify that alternative parts match the 600 V/100 A ratings and TO-247 package dimensions before integration.
