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The NGTB50N120FL2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing Field Stop II technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. The device has a typical collector-emitter saturation voltage of 2.3 V and a power dissipation rating of 417 W. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247 package.
Verify the specific part number against official manufacturer documentation to confirm technical specifications and availability. Ensure that the ordering suffix matches the required configuration. Cross-reference with authorized distributors to validate authenticity and compliance with relevant standards before procurement.
Select this component for high-voltage applications requiring reliable switching and low conduction losses. Consider the thermal management requirements given the 417 W power dissipation rating. Ensure the gate drive circuitry supports the specified voltage limits and switching characteristics for optimal performance.
This IGBT belongs to the NGTB series, which utilizes Field Stop II technology to enhance performance in medium-power applications. The series is designed for efficiency and reliability in industrial and consumer electronics. The TO-247 package provides a balance of electrical isolation and thermal conductivity suitable for through-hole mounting.
Check for direct replacements within the same series or similar voltage and current ratings. Verify pin compatibility and thermal characteristics when substituting. Consult official substitution guides for confirmed alternatives.