NGTB50N120FL2WG

NGTB50N120FL2WG

  • Description:IGBT TRENCH FS 1200V 100A TO-247
  • Series:-

SKU:e14971d129bc Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH FS 1200V 100A TO-247
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 50A
  • Power - Max:535 W
  • Switching Energy:4.4mJ (on), 1.4mJ (off)
  • Input Type:Standard
  • Gate Charge:311 nC
  • Td (on/off) @ 25°C:118ns/282ns
  • Test Condition:600V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr):256 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Grade:-
  • Qualification:-

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NGTB50N120FL2WG

Overview

The NGTB50N120FL2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing Field Stop II technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. The device has a typical collector-emitter saturation voltage of 2.3 V and a power dissipation rating of 417 W. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247 package.

Feature Summary

  • Field Stop II technology for optimized switching performance
  • High short-circuit capability for robust operation
  • Low saturation voltage for reduced conduction losses

Applications

  • Motor drives
  • Switched-mode power supplies
  • Induction heating

Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm technical specifications and availability. Ensure that the ordering suffix matches the required configuration. Cross-reference with authorized distributors to validate authenticity and compliance with relevant standards before procurement.

Selection Notes

Select this component for high-voltage applications requiring reliable switching and low conduction losses. Consider the thermal management requirements given the 417 W power dissipation rating. Ensure the gate drive circuitry supports the specified voltage limits and switching characteristics for optimal performance.

Part Context

This IGBT belongs to the NGTB series, which utilizes Field Stop II technology to enhance performance in medium-power applications. The series is designed for efficiency and reliability in industrial and consumer electronics. The TO-247 package provides a balance of electrical isolation and thermal conductivity suitable for through-hole mounting.

Replacement Considerations

Check for direct replacements within the same series or similar voltage and current ratings. Verify pin compatibility and thermal characteristics when substituting. Consult official substitution guides for confirmed alternatives.

NGTB50N120FL2WGNGTB50N120FL2WG

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