NGTB50N60S1WG

NGTB50N60S1WG

$2.75
  • Description:IGBT TRENCH 600V 100A TO-247-3
  • Series:-

SKU:fdaccf0d4fea Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH 600V 100A TO-247-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 50A
  • Power - Max:417 W
  • Switching Energy:1.5mJ (on), 460µJ (off)
  • Input Type:Standard
  • Gate Charge:220 nC
  • Td (on/off) @ 25°C:100ns/237ns
  • Test Condition:400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr):94 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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NGTB50N60S1WG

Overview

The NGTB50N60S1WG is a Field Stop IGBT from onsemi, designed for inverter welding applications. It features Trench construction with a co-packaged soft and fast free-wheeling diode. The device operates at a collector-emitter voltage of 600 V and supports continuous collector currents of 100 A at 25°C case temperature and 50 A at 100°C. Key electrical parameters include a maximum saturation voltage (VCEsat) of 2.19 V at 25°C and 2.00 V at 175°C junction temperature. Switching losses are rated at 1.50 mJ turn-on and 0.46 mJ turn-off at 25°C. The component provides 5 µs short-circuit withstand capability and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

  • Robust Trench construction optimized for high-speed switching and low conduction losses
  • Integrated soft and fast co-packaged free-wheeling diode with low forward voltage
  • High thermal stability supporting operation up to 175°C junction temperature
  • Short-circuit robustness providing 5 µs protection under specified conditions

Applications

  • Inverter welding equipment
  • Industrial motor control systems
  • High-frequency power conversion circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and lead-free status. Confirm that the requested revision matches the current datasheet version. Ensure compatibility with TO-247 mounting requirements. Validate thermal management solutions align with the specified thermal resistance values. Check for any recent product change notices affecting availability or specifications.

Selection Notes

Select this component when designing circuits requiring 600 V blocking capability with integrated anti-parallel diode functionality. Evaluate thermal performance based on the 0.36 °C/W junction-to-case resistance for the IGBT and 0.60 °C/W for the diode. Consider the 5 µs short-circuit limit when designing protection logic. Ensure gate drive voltages remain within the ±20 V absolute maximum rating to prevent damage.

Part Context

This part belongs to the NGTB series of Field Stop IGBTs manufactured by onsemi. It utilizes advanced Trench technology to achieve superior switching performance compared to older planar designs. The series is specifically targeted at demanding industrial applications such as welding inverters where efficiency and reliability are critical.

Replacement Considerations

Direct replacements must match the 600 V rating, TO-247 package, and integrated diode configuration. Verify that substitute devices offer comparable switching energy values and short-circuit withstand times. Ensure thermal characteristics and pinout definitions are identical to maintain board compatibility.

NGTB50N60S1WGNGTB50N60S1WG
$2.75
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