NGTB50N65S1WG

Description：IGBT TRENCH 650V 140A TO-247-3
Series：-

SKU:2056992961a0 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 650V 140A TO-247-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：140 A
Current - Collector Pulsed (Icm)：140 A
Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 50A
Power - Max：300 W
Switching Energy：1.25mJ (on), 530µJ (off)
Input Type：Standard
Gate Charge：128 nC
Td (on/off) @ 25°C：75ns/128ns
Test Condition：400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)：70 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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NGTB50N65S1WG

Overview

The NGTB50N65S1WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the onsemi FSII series, manufactured using silicon technology. It features a collector-emitter maximum voltage (VCEO) of 650 V and a continuous collector current of 50 A at 25°C. The device operates within a temperature range of -55°C to +175°C junction temperature. Maximum gate-emitter voltage ratings are specified as -20 V and +20 V. The component is housed in a TO-247 package with tube packaging.

Feature Summary

Field Stop II trench construction for optimized switching performance
Integrated fast and soft co-packaged free-wheeling diode
Separate emitter drive pin configuration to minimize turn-on losses

Applications

Uninterruptible Power Supply (UPS) inverters
Solar power inverters
High-speed switching applications requiring low conduction voltage

Procurement Notes

Verify end-of-life status prior to design finalization, as this component may be discontinued. Confirm RoHS compliance details through official manufacturer documentation. Ensure sourcing channels provide valid traceability for industrial-grade silicon components. Validate package integrity upon receipt to prevent thermal interface issues during installation.

Selection Notes

Select this IGBT for designs requiring 650 V blocking capability with moderate current handling. The separate emitter pin necessitates specific PCB layout considerations to leverage reduced E_on losses compared to standard three-terminal packages. Evaluate thermal management requirements based on the 50 A continuous rating and 175°C maximum junction temperature limits.

Part Context

This part belongs to the NGTB50N65S1 family of Field Stop II IGBTs. It shares architectural similarities with other onsemi high-voltage discrete switches but is distinct in its specific current rating and package configuration. The TO-247-4L variant offers improved electrical performance over traditional TO-247-3L packages due to dedicated emitter sensing.

Replacement Considerations

Direct substitutes include NGTB50N65FL2WG and NGTB50N65FL2WAG, which share similar voltage and current ratings within the same manufacturer's portfolio. Verify pinout compatibility and thermal characteristics before cross-referencing with other manufacturers' equivalents.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.