NGTD13T65F2WP

$0.65

Description：IGBT TRENCH FIELD STOP 650V DIE
Series：-

SKU:ffe201dfad0d Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FIELD STOP 650V DIE
Series：-
Mfr：onsemi
Package：Bulk,Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 30A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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NGTD13T65F2WP

Overview

The NGTD13T65F2WP is a Trench Field Stop II IGBT die manufactured by onsemi. It features a 650 V collector-emitter breakdown voltage and is designed for high-efficiency switching in motor drive and inverter applications. The component utilizes advanced trench gate technology to minimize conduction losses while maintaining robust switching performance. Packaged as a bare die, it allows for flexible integration into custom power modules.

Feature Summary

Utilizes Trench Field Stop II technology for enhanced efficiency
Optimized for motor drive and inverter applications
Designed for high-power density integration

Applications

Motor drive systems
Inverter circuits
Industrial power conversion

Procurement Notes

Verify the specific datasheet revision and ordering suffixes when sourcing this component. Confirm that the received parts match the exact die specifications required for your thermal and electrical design. Ensure compliance with RoHS standards if applicable to your manufacturing process. Cross-reference part numbers with official onsemi documentation to avoid counterfeit or obsolete stock issues during procurement.

Selection Notes

Select this IGBT die for applications requiring high efficiency and compact power solutions. Consider the thermal management requirements associated with bare die mounting. Evaluate the compatibility of the trench field stop technology with your specific switching frequency and load conditions. Ensure the package configuration meets the mechanical constraints of your target module design.

Part Context

This component belongs to onsemi's lineup of discrete IGBT dies. It represents a specialized semiconductor solution intended for direct integration into larger power assemblies rather than standalone use. The product line focuses on delivering improved performance metrics through advanced silicon technologies tailored for demanding industrial environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official onsemi resources for potential alternatives or newer generations within the same product family.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.