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Product Detailed Parameters
- Description：NGW75T65H3DFP/SOT429-2/TO247-3
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：502 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 75A
- Power - Max：502 W
- Switching Energy：2.94mJ (on), 950µJ (off)
- Input Type：Standard
- Gate Charge：124 nC
- Td (on/off) @ 25°C：30ns/130ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：122 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3L
- Grade：-
- Qualification：-
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Overview
The NGW75T65H3DFPQ is a 650 V Insulated Gate Bipolar Transistor (IGBT) manufactured by Nexperia. It utilizes a carrier storage trench gate field-stop structure combined with third-generation technology to optimize performance for high-voltage applications. The device is housed in a SOT-429 package, also known as TO-247-3L, designed for through-hole mounting. This component is engineered to provide robust and cost-effective power switching solutions suitable for demanding industrial environments.
Feature Summary
- Incorporates a carrier storage trench gate field-stop architecture for enhanced efficiency
- Utilizes third-generation technology to improve power density and reliability
- Designed for high-voltage switching in industrial power conversion systems
Applications
- Heating, ventilation, and air conditioning (HVAC) systems
- Industrial servo motors ranging from 5 to 20 kW
- Electric vehicle (EV) charging infrastructure
- Induction heating equipment
Procurement Notes
Verify the specific suffix 'Q' against the official Nexperia datasheet to confirm packaging or tape-and-reel specifications. Ensure the ordering part number matches the exact electrical characteristics required for the target circuit design. Cross-reference the SOT-429/TO-247-3L package dimensions with the mechanical drawing provided in the product documentation before finalizing procurement.
Selection Notes
Select this IGBT for applications requiring 650 V blocking voltage and high thermal stability. The carrier storage technology makes it suitable for frequencies up to 20 kHz in motor drive applications. Compare the saturation voltage and switching losses against similar NGB or NGW series variants to determine the optimal balance between conduction loss and switching speed for the specific system topology.
Part Context
This component belongs to Nexperia's NGW series of 650 V IGBTs, which are specifically developed for industrial power applications. The series leverages advanced trench gate field-stop processes to deliver improved performance over previous generations. These devices are positioned as key solutions for modernizing power electronics in sectors such as renewable energy, electric mobility, and industrial automation.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative models only through direct comparison of the official datasheets for voltage ratings, current capabilities, and package pinouts.
