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The NHDTA114ET-QR is a PNP resistor-equipped transistor (RET) from Nexperia, housed in an SOT-23 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 80 V and a continuous collector current of 100 mA. The device includes built-in resistors with a typical input resistance of 10 kOhms and a typical resistor ratio of 1. It operates within a temperature range of -55 °C to +150 °C, with a power dissipation rating of 250 mW. The component has a minimum DC collector/base gain (hfe) of 50 and a maximum operating frequency of 150 MHz.
Verify the specific suffix 'QR' indicates automotive qualification status against official Nexperia documentation. Confirm RoHS compliance details directly from the datasheet. Ensure the ordering part number matches the required package variant. Check for any regional sales restrictions or delivery limitations before finalizing procurement plans.
Select this component when high voltage isolation and compact SMD packaging are required. The integrated resistors eliminate external biasing components, reducing board space. Verify that the 100 mA current rating meets load requirements. Ensure the operating temperature range aligns with the system environment constraints.
This part belongs to the Nexperia PNP Resistor-Equipped Transistor family. It serves as a complement to NPN variants like the NHDTC114YT. The device integrates discrete transistors and resistors into a single small plastic package to optimize assembly efficiency.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Nexperia cross-reference guides for verified alternatives.