SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NHDTA114ETR is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an SOT23 (TO-236AB) surface-mount package. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of -80 V and a continuous output current (IO) of -100 mA. The device features a typical input resistor (R1) of 10 kΩ with a ratio of 1. It operates within a temperature range of -55 °C to +150 °C, with a total power dissipation of 250 mW at Tamb ≤ 25 °C. The transition frequency (fT) is typically 150 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Ensure the part number matches the required resistance values and package type before procurement. Cross-reference the latest datasheet revision to confirm availability and any potential changes to specifications or marking codes.
Select this component when a PNP transistor with integrated base biasing is required in a compact SOT23 footprint. The 10 kΩ internal resistor value suits standard digital interface applications. Consider the -80 V rating for higher voltage switching tasks compared to lower-voltage alternatives. Verify thermal management requirements based on the specified power dissipation limits.
This device belongs to the NHDTA114/124/144ET series of PNP resistor-equipped transistors. It serves as the NPN complement counterpart to the NHDTC114ET. The series offers standardized resistor ratios and values to facilitate consistent design across different digital switching applications requiring high breakdown voltages.
Publicly confirmed substitutes include the NHDTC114ET for NPN functionality. For direct replacement, verify equivalent pinout and electrical ratings against other PNP RETs in the SOT23 package family.