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The NHDTA114EUF is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an SOT323 (SC-70) surface-mount package. It integrates a PNP transistor with built-in bias resistors R1 and R2, both rated at 10 kΩ. The device supports a collector-emitter voltage of -80 V and an output current of -100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 50 at -10 mA and -5 V, a transition frequency of 150 MHz, and a total power dissipation of 235 mW at 25 °C on a single-sided FR4 PCB.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and manufacturing site codes. Ensure that the procurement specifications align with the non-automotive qualification status indicated in the product data sheet revision history. Confirm compliance requirements such as RoHS and REACH status prior to finalizing orders.
Select this component when a compact PNP switching solution with integrated base biasing is required. The 10 kΩ resistor values are suitable for standard logic level driving. Consider the thermal resistance characteristics if operating in high ambient temperatures or dense PCB layouts. Verify that the non-automotive qualification meets the target application's reliability standards.
This part belongs to the NHDTA1xxEU series of PNP Resistor-Equipped Transistors. It serves as the PNP counterpart to the NHDTC114EU NPN RET. The series shares the same SOT323 package and general feature set, differing primarily in the polarity of the internal transistor and the specific resistor configurations available across the family variants.
Publicly confirmed substitute part numbers are not provided in the source document. Designers should consult official Nexperia channels for qualified alternatives or cross-reference based on identical pinout, voltage ratings, and resistor values.