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The NHDTA114YT-QR is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an SOT-23 surface-mount package. It features a collector-emitter breakdown voltage of 80 V and a continuous collector current of 100 mA. The device integrates internal biasing resistors with typical values of 10 kΩ for R1 and 47 kΩ for R2. Power dissipation is rated at 250 mW, supporting an operating temperature range from -55 °C to +150 °C. This component is qualified under the AEC-Q100 standard for automotive applications.
Verify the specific suffix 'QR' indicates AEC-Q100 automotive qualification status against the official Nexperia datasheet. Confirm the package designation matches SOT-23 requirements for your PCB layout. Ensure environmental compliance data aligns with project specifications before finalizing procurement orders.
Select this component when automotive reliability is required alongside space-constrained SOT-23 packaging. The integrated resistor network eliminates external biasing components, reducing assembly costs. Verify that the 80 V rating and 100 mA current capacity meet the specific load requirements of the target application circuit.
This part belongs to the NHDTA series of PNP resistor-equipped transistors designed for digital applications. It serves as a cost-effective alternative to discrete transistor-resistor networks. The 'Q' suffix denotes automotive-grade qualification, while 'T' indicates tape-and-reel packaging for automated assembly processes.
Direct substitutes include other AEC-Q100 qualified PNP RETs in SOT-23 packages with similar electrical ratings. Verify pinout compatibility and thermal characteristics before substitution. Non-automotive equivalents like the standard NHDTA114YT may lack the required reliability certifications for automotive use.